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Si7100DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
24
1.9
33
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
8
12
- 3.5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.4
1.0
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = 8 V, V GS = 0 V
V DS = 8 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 4.5 V
30
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 4.5 V, I D = 15 A
V GS = 2.5 V, I D = 10 A
V DS = 5 V, I D = 15 A
0.0029
0.0035
120
0.0035
0.0045
Ω
S
Dynamic b
Input Capacitance
C iss
3810
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 4 V, V GS = 0 V, f = 1 MHz
1625
1205
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 4 V, V GS = 8 V, I D = 10 A
V DS = 4 V, V GS = 4.5 V, I D = 10 A
69
40
3.8
105
60
nC
Gate-Drain Charge
Q gd
8.2
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 4 V, R L = 0.8 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
V DD = 4 V, R L = 0.8 Ω
I D ? 5 A, V GEN = 8 V, R g = 1 Ω
1.1
19
57
61
10
14
52
53
8
1.7
30
90
95
15
25
80
80
15
Ω
ns
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Document Number: 73785
S-80581-Rev. C, 17-Mar-08
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